CDBJSC101200-G Datasheet (data sheet) PDF





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CDBJSC101200-G Datasheet - Silicon Carbide Power Schottky Diode

CDBJSC101200-G   CDBJSC101200-G  

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Silicon Carbide Power Schottky Diode CDB JSC101200-G Reverse Voltage: 1200 V For ward Current: 10 A RoHS Device Feature s - Rated to 1200V at 10 Amps - Short r ecovery time. - High speed switching po ssible. - High frequency operation. - H igh temperature operation. - Temperatur e independent switching behaviour. - Po sitive temperature coefficient on VF. Circuit diagram K(3) K(1)

Manufacture Part Number Description

Comchip

CDBJSC101200-G

Silicon Carbide Power Schottky Diode




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