CDBJSC10650-G Datasheet (data sheet) PDF





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CDBJSC10650-G Datasheet - Silicon Carbide Power Schottky Diode

CDBJSC10650-G   CDBJSC10650-G  

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Silicon Carbide Power Schottky Diode CDB JSC10650-G Reverse Voltage: 650 V Forwa rd Current: 10 A RoHS Device Features - Rated to 650V at 10 Amps - Short reco very time. - High speed switching possi ble. - High frequency operation. - High temperature operation. - Temperature i ndependent switching behaviour. - Posit ive temperature coefficient on VF. Cir cuit diagram K(3) K(1) A(2

Manufacture Part Number Description

Comchip

CDBJSC10650-G

Silicon Carbide Power Schottky Diode




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