CDBJSC3650-G Datasheet





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CDBJSC3650-G Datasheet - Silicon Carbide Power Schottky Diode

CDBJSC3650-G   CDBJSC3650-G  

Datasheet: CDBJSC3650-G datasheet

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Description: Silicon Carbide Power Schottky Diode CDB JSC3650-G Reverse Voltage: 650 V Forwar d Current: 3 A RoHS Device Features - Rated to 650V at 3 Amps - Short recover y time. - High speed switching possible . - High frequency operation. - High te mperature operation. - Temperature inde pendent switching behaviour. - Positive temperature coefficient on VF. Circui t diagram K(3) K(1) A(2) TO-220-2 0 .116(2.95) 0.104(2.65) 0.409(10.40) 0. 394(10.00) 0.311(7.90) 0.303(7.70) 0.1 52(3.85) 0.148(3.75) 0.646(16.40) Max. 0.620(15.75) 0.600(15.25) 0.181(4.60 ) 0.173(4.40) 0.052(1.32) 0.048(1.23) 0 .260(6.60) 0.244(6.20) 0.067(1.70) 0.0 45(1.14) 0.155(3.93) 0.138(3.50) 0.551 (14.00) 0.512(13.00) 0.107(2.72) 0.


Manufacture Part Number Description

Comchip

CDBJSC3650-G

Silicon Carbide Power Schottky Diode




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