CDBJSC51200-G Datasheet





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CDBJSC51200-G Datasheet - Silicon Carbide Power Schottky Diode

CDBJSC51200-G   CDBJSC51200-G  

Datasheet: CDBJSC51200-G datasheet

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Description: Silicon Carbide Power Schottky Diode CDB JSC51200-G Reverse Voltage: 1200 V Forw ard Current: 5 A RoHS Device Features - Rated to 1200V at 5 Amps - Short reco very time. - High speed switching possi ble. - High frequency operation. - High temperature operation. - Temperature i ndependent switching behaviour. - Posit ive temperature coefficient on VF. Cir cuit diagram K(3) K(1) A(2) TO-220-2 0.116(2.95) 0.104(2.65) 0.409(10.40) 0.394(10.00) 0.311(7.90) 0.303(7.70) 0.152(3.85) 0.148(3.75) 0.646(16.40) M ax. 0.620(15.75) 0.600(15.25) 0.181(4 .60) 0.173(4.40) 0.052(1.32) 0.048(1.23 ) 0.260(6.60) 0.244(6.20) 0.067(1.70) 0.045(1.14) 0.155(3.93) 0.138(3.50) 0. 551(14.00) 0.512(13.00) 0.107(2.72)


Manufacture Part Number Description

Comchip

CDBJSC51200-G

Silicon Carbide Power Schottky Diode




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