Silicon Carbide Power Schottky Diode
CDBJSC51200-G
Reverse Voltage: 1200 V Forward Current: 5 A RoHS Device
Features
- ...
Silicon Carbide Power Schottky Diode
CDBJSC51200-G
Reverse
Voltage: 1200 V Forward Current: 5 A RoHS Device
Features
- Rated to 1200V at 5 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF.
Circuit diagram
K(3)
K(1) A(2)
TO-220-2
0.116(2.95) 0.104(2.65)
0.409(10.40) 0.394(10.00)
0.311(7.90) 0.303(7.70)
0.152(3.85) 0.148(3.75)
0.646(16.40) Max.
0.620(15.75) 0.600(15.25)
0.181(4.60) 0.173(4.40)
0.052(1.32) 0.048(1.23)
0.260(6.60) 0.244(6.20)
0.067(1.70) 0.045(1.14)
0.155(3.93) 0.138(3.50)
0.551(14.00) 0.512(13.00)
0.107(2.72) 0.094(2.40)
0.035(0.88) 0.024(0.61)
0.203(5.15) 0.195(4.95)
0.028(0.70) 0.019(0.49)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Repetitive peak reverse
voltage Surge peak reverse
voltage DC bolcking
voltage Typical continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance Operating junction temperature range Storage temperature range
Conditions
Tc = 150°C Tc = 25°C, tp = 10ms Half sine wave, D = 0.3 Tc = 25°C, tp = 10ms Half sine wave Tc = 25°C Tc = 110°C Junction to case
Symbol
VRRM VRSM VDC
IF IFRM IFSM
PTOT
RθJC TJ TSTG
Value
1200 1200 1200
5 25
35 109.5
47 1.37 -55 ~ +175 -55 ~ +175
Company reserves the right to improve product ...