CDBJSC5650-G Datasheet (data sheet) PDF





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CDBJSC5650-G Datasheet - Silicon Carbide Power Schottky Diode

CDBJSC5650-G   CDBJSC5650-G  

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Silicon Carbide Power Schottky Diode CDB JSC5650-G Reverse Voltage: 650 V Forwar d Current: 5 A RoHS Device Features - Rated to 650V at 5 Amps - Short recover y time. - High speed switching possible . - High frequency operation. - High te mperature operation. - Temperature inde pendent switching behaviour. - Positive temperature coefficient on VF. Circui t diagram K(3) K(1) A(2)

Manufacture Part Number Description

Comchip

CDBJSC5650-G

Silicon Carbide Power Schottky Diode




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