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CDBV130-G

Comchip Technology

(CDBV120-G - CDBV140-G) SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBV120-G THRU. CDBV140-G I O =1.0A V R =20 ~ 40V RoHS Device Features...


Comchip Technology

CDBV130-G

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Description
SMD Schottky Barrier Diode SMD Diodes Specialist CDBV120-G THRU. CDBV140-G I O =1.0A V R =20 ~ 40V RoHS Device Features -For use in low voltage, high frequency inverters. -Free wheeling, and polarity protection applications. SOD-323 0.071 (1.80) 0.063 (1.60) Mechanical Data -Case: Molded plastic SOD-323 -Terminals: Solderable per MIL-STD-750, Method 2026.1. -Polarity: Indicated by cathode band. -Mounting position: Any. -Marking: CDBV120-G : SJ CDBV130-G : SK CDBV140-G : SL 0.014 (0.35) 0.010 (0.25) 0.106 (2.70) 0.098 (2.50) 0.055 (1.40) 0.047 (1.20) 0.006 (0.15) 0.039 (1.00)max 0.003 (0.08) 0.004 (0.10)max 0.019 (0.475)REF. Dimensions in inches and (millimeter) Maximum Ratings (at T A=25 OC unless otherwise specified) Parameter www.DataSheet4U.com Symbol V RM V RRM V RWM VR V R(RMS) IO I FSM I FRM PD RθJA T STG CDBV120-G 20 20 14 CDBV130-G 30 30 21 1 25 625 200 625 -65~+150 CDBV140-G 40 40 28 Unit V V V A A mA mW O Non-repetitive peak reverse voltage Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Peak forward surge current @Tp=8.3mS Repetitive peak forward current Power dissipation Thermal resistance (junction to ambient) Storage temperature C/W O C Electrical Characteristics (at T A=25 OC unless otherwise specified) Parameter Reverse breakdown voltage I R =1mA V R =20V V R =30V V R =40V I F =1.0A Forward voltage I F =3.0A Diode Capacitance V R =4V, f=1MHz CDBV120-G ...




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