CDM22011-600LRFP N-CHANNEL
LR POWER MOSFET 11 AMP, 600 VOLT
TO-220FP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPT...
CDM22011-600LRFP N-CHANNEL
LR POWER
MOSFET 11 AMP, 600 VOLT
TO-220FP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM22011-600LRFP is a 600 volt N-Channel
MOSFET designed for high
voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This UltraMOSTM
MOSFET combines high
voltage capability with ultra low rDS(ON), low threshold
voltage, and low gate charge for optimal efficiency.
MARKING CODE: CDM11-600LR
APPLICATIONS: Power Factor Correction Alternative energy inverters Solid State Lighting (SSL)
FEATURES: High
voltage capability (VDS=600V) Low gate charge (Qgs=4.45nC TYP) Ultra low rDS(ON) (0.3Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JC
Thermal Resistance
JA
Note 1: L=30mH, IAS=4.0A, VDD=100V, RG=25Ω, Initial TJ=25°C
600 30 11 44 11 44 280 25 -55 to +150 5.0 120
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR VGS=30V, VDS=0
IDSS
VDS=600V, VGS=0
0.047
BVDSS
VGS=0, ID=250μA
600
VGS(th)
VGS=VDS, ID=250μA
2.0...
