CDM2206-800LR N-CHANNEL
LR POWER MOSFET 6.0 AMP, 800 VOLT
TO-220 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:...
CDM2206-800LR N-CHANNEL
LR POWER
MOSFET 6.0 AMP, 800 VOLT
TO-220 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM2206-800LR is an 800 volt N-Channel
MOSFET designed for high
voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This
MOSFET combines high
voltage capability with ultra low rDS(ON), low threshold
voltage, and low gate charge for optimal efficiency.
MARKING CODE: CDM06-800LR
APPLICATIONS: Power Factor Correction
Alternative energy inverters
Solid State Lighting (SSL)
FEATURES: High
voltage capability (VDS=800V) Low gate charge (Qgs=2.8nC TYP) Ultra low rDS(ON) (0.8Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (Steady State)
ID
Continuous Drain Current (TC=100°C)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JC
Thermal Resistance
JA
Note 1: L=79mH, IAS=2.4A, VDD=100V, RG=25Ω, Initial TJ=25°C
800 30 6.0 4.0 24 6.0 24 250 110 -55 to +150 1.14 62.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR VGS=30V, VDS=0
IDSS
VDS=800V, VGS=0
0.0426
BVDSS
VGS=0, ID=250μA
800...
