CDM7-600LR SURFACE MOUNT SILICON
N-CHANNEL LR POWER MOSFET 7.0 AMP, 600 VOLT
DPAK CASE
w w w. c e n t r a l s e m i . c...
CDM7-600LR SURFACE MOUNT SILICON
N-CHANNEL LR POWER
MOSFET 7.0 AMP, 600 VOLT
DPAK CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM7-600LR is a 600 Volt N-Channel
MOSFET designed for high
voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This UltraMOSTM
MOSFET combines high
voltage capability with ultra low rDS(ON), low threshold
voltage, and low gate charge for optimal efficiency.
MARKING: FULL PART NUMBER
APPLICATIONS: Power Factor Correction Alternative energy inverters Solid State Lighting (SSL)
FEATURES:
High
voltage capability (VDS=600V) Low gate charge (Qgs=2.62nC TYP) Ultra low rDS(ON) (0.53Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
Thermal Resistance
ΘJA
Note 1: L=30mH, IAS=3.0A, VDD=100V, RG=25Ω, Initial TJ=25°C
600 30 7.0 28 7.0 28 145 60 -55 to +150 2.08 110
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR VGS=30V, VDS=0
IDSS
VDS=600V, VGS=0
0.065
BVDSS
VGS=0, ID=250μA
600
VGS(th)
VGS=VDS, ID...
