Diodes. CDZ55B11 Datasheet

CDZ55B11 Datasheet PDF

Part CDZ55B11
Description Zener Diodes
Feature CDZ55B11; Zener Diodes CDZ55B-Series Crownpo Technology Features • This diode is also available in other cas.
Manufacture Crownpo Technology
Datasheet
Download CDZ55B11 Datasheet




CDZ55B11
Zener Diodes
CDZ55B-Series
Crownpo Technology
Features
• This diode is also available in other case styles
including the 0805 case with the type designation
CDZ55B-S-Series.
• Silicon Planar Power Zener Diodes.
Mechanical Data
Case: 1206
Weight : approx.10 mg
Marking : Cathode band
.067 (1.70)
.051 (1.30)
1206
.134 (3.40)
.118 (3.00)
12
.030 (.75)
.014 (.35)
.037 (.95)
.029 (.75)
Dimensions in inches and (millimeters)
Mounting Pad Layout
.025(.635)
.085(2.16) Typ.
Typ.
.067 (1.70)
Typ.
Maximum Ratings and Thermal Characteristics (T amb = 25 °C, unless otherwise specified)
Parameter
Power dissipation
Junction temperature
Storage temperature range
Thermal resıstanceJunction to ambient aır
Symbol
Ptot
Tj
Tstg
RθJA
Value
500
175
- 65 to + 175
300
Unit
mW
°C
°C
°C/W
Electrical Characteristics
Parameter
Forward voltage IF = 200 mA
Symbol
VF
Max
1.5
Unit
V
16-Aug-07
Document No. 31005
www.crownpo.com



CDZ55B11
CDZ55B-Series
Crownpo Technology
Electrical Characteristics
Part Number
CDZ55B5V1
CDZ55B5V6
CDZ55B6V2
CDZ55B6V8
CDZ55B7V5
CDZ55B8V2
CDZ55B9V1
CDZ55B10
CDZ55B11
CDZ55B12
CDZ55B13
CDZ55B15
CDZ55B16
CDZ55B18
CDZ55B20
CDZ55B22
CDZ55B24
CDZ55B27
CDZ55B30
CDZ55B33
CDZ55B36
Nomınal Zener Voltage
Marking
Code
VZ @ IZT
Min V
Max V
5V1 5
5.2
5V6 5.48
6V2 6.08
6V8 6.66
5.72
6.32
6.94
7V5 7.35
7.65
8V2 8.04
8.36
9V1 8.92
9.28
10 9.8
10.2
11
10.78
11.22
12
11.76
12.24
13
12.74
13.26
15 14.7
15.3
16 15.7
16.3
18
17.64
18.36
20 19.6
20.4
22 21.55 22.45
24 23.5
24.5
27 26.4
27.6
30 29.4
30.6
33 32.4
33.6
36 35.3
36.7
Max Zener Impedance
ZZT@ IZT
mA
60 5
40 5
10 5
85
75
75
10 5
15 5
20 5
20 5
26 5
30 5
40 5
50 5
55 5
55 5
80 5
80 5
80 5
80 5
80 5
ZZK@ IZK
mA
550 1
450 1
200 1
150 1
50 1
50 1
50 1
70 1
70 1
90 1
110 1
110 1
170 1
170 1
220 1
220 1
220 1
220 1
220 1
220 1
220 1
Max Reverse
Leakage Current
IR @ VR
µA V
0.1 1
0.1 1
0.1 2
0.1 3
0.1 5
0.1 6.2
0.1 6.8
0.1 7.5
0.1 8.2
0.1 9.1
0.1 10
0.1 11
0.1 12
0.1 13
0.1 15
0.1 16
0.1 18
0.1 20
0.1 22
0.1 24
0.1 27
16-Aug-07
Document No. 31005
www.crownpo.com



CDZ55B11
CDZ55B-Series
Crownpo Technology
Typical Characteristics ( Tamb = 25 °C, unless otherwise specified)
Fig1. Thermal Resistance vs. Lead Length
500
400
300
200
100
0
0
ll
TL =constant
5 10 15
l Lead Length ( mm )
20
Fig 4. Typical Change of Working Voltage vs. Junction
Temperature
1.3
V Ztn =V Zt /V Z(25˚C)
1.2
TK VZ =10 x 10 -4 /K
8 x 10 -4 /K
1.1 6 x 10 -4 /K
4 x 10 -4 /K
2 x 10 -4 /K
1.0 0
-2 x 10 -4 /K
-4 x 10 -4 /K
0.9
0.8
–60
0 60 120 180
T j Junction Temperature (°C )
240
Fig2. Total Power Dissipation vs. Ambient Temperature
Fig5. Temperature Coefficient of Vz vs. Z-Voltage
600
500
400
300
200
100
0
0
40 80 120 160
T amb Ambient Temperature(°C )
200
15
10
5
I Z =5mA
0
-5
0 10 20 30 40 50
V Z Z-Voltage ( V )
Fig3. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
1000
T j =25˚ C
100
I Z =5mA
10
1
05
10 15 20 25
V Z Z-Voltage ( V )
Fig 6. Diode Capacitance vs. Z-Voltage
200
150
V R=2V
T j =25˚ C
100
50
0
05
10 15 20 25
V Z Z-Voltage ( V )
16-Aug-07
Document No. 31005
www.crownpo.com







@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)