Transistor. CEC3933 Datasheet

CEC3933 Datasheet PDF

Part CEC3933
Description N-Channel Enhancement Mode Field Effect Transistor
Feature CEC3933; CEC3933 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 39A, RDS(ON).
Manufacture CET
Datasheet
Download CEC3933 Datasheet

CEC3933 N-Channel Enhancement Mode Field Effect Transistor CEC3933 Datasheet





CEC3933
CEC3933
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 39A, RDS(ON) = 11m@VGS = 10V.
RDS(ON) = 19m@VGS = 4.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
S
56 78
Bottom View
DFN3*3
43 21
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous@RθJc
@RθJA
Drain Current-Pulsed a@RθJc
ID 39
ID 12.5
IDM 156
@RθJA
IDM 50
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case b
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJc
RθJA
Limit
5
50
Units
V
V
A
A
A
A
W
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2013.Sep
http://www.cet-mos.com



CEC3933
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID =12.5A
VGS = 4.5V, ID =10A
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15V, ID = 10A,
VGS= 10V, RGEN= 1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 10A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
CEC3933
Min Typ Max Units
30 V
1 µA
100 nA
-100 nA
1 3V
9 11 m
14 19 m
1005
265
170
pF
pF
pF
16 ns
9 ns
35.5 ns
9 ns
22 nC
3 nC
7 nC
1.25 A
1.2 V
2



CEC3933
15
VGS=10,8,6V
12
9
VGS=3V
6
3
0
012345
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1500
1250
1000
Ciss
750
500
250
0
0
Crss
3
Coss
6 9 12 15
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEC3933
20
25 C
16
12
8
4 TJ=125 C
-55 C
0
012345
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=12.5A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current






@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)