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CED05N65 Datasheet

Part Number CED05N65
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CED05N65 DatasheetCED05N65 Datasheet (PDF)

CED05N65/CEU05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 4A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous .

  CED05N65   CED05N65






N-Channel MOSFET

CED05N65/CEU05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 4A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 650 ±30 4 2.5 16 56 0.45 Single Pulsed Avalanche Energy d EAS 43 Single Pulsed Avalanche Current d IAS 3.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.2 50 Units V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2011.Nov http://www.cet-mos.com CED05N65/CEU05N65 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 650 .


2015-09-17 : CED84A4    CEU84A4    CED6056    CEU6056    CED6086    CEU6086    CED6186    CEU6186    CED6336    CEU6336   


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