Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CED4279/CEU4279
D1/D2
FEATURES
40V , 14A , RDS(ON) = 3...
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CED4279/CEU4279
D1/D2
FEATURES
40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-252-4L package.
S1 G1 S2 G2 CEU SERIES TO-252-4L D1/D2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous e Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol N-Channel VDS VGS ID e IDM PD TJ,Tstg 40
P-Channel 40
Units V V A A W W/ C C
±20
14 56 10.4 0.08 -55 to 150
±20
-9 -36
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 12 50 Units C/W C/W
Details are subject to change without notice . 1
Rev 2. 2007.Jan http://www.cetsemi.com
CED4279/CEU4279
N-Channel Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold
Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time ...