CED6056G

CED6056G/CEU6056G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 80A , RDS(ON) = 5.4mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 60 ±20 80 320 68 0.45 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.2 50 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2011.Sep http://www.cetsemi.com CED6056G/CEU6056G Electric...