CED6060N/CEU6060N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 34A, RDS(ON) = 25mΩ @VGS = 10V. Supe...
CED6060N/CEU6060N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 34A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
60
±20
34 136 62.5 0.42
Operating and Store Temperature Range
TJ,Tstg
-65 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.4 50
Units V V A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 1. 2008.Sep. http://www.cetsemi.com
CED6060N/CEU6060N
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold
Voltage Static Drain-Source On-Resistance Dynamic Characteristics c
Symbol
Test Condition
BVDSS IDSS IGSSF IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 15A
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