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CED655 Datasheet

Part Number CED655
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CED655 DatasheetCED655 Datasheet (PDF)

CED655/CEU655 N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 6.4A, RDS(ON) = 0.45Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain .

  CED655   CED655






Part Number CED65P03
Manufacturers CET
Logo CET
Description P-Channel MOSFET
Datasheet CED655 DatasheetCED65P03 Datasheet (PDF)

CED65P03/CEU65P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -65A, RDS(ON) = 9mΩ @VGS = -10V. RDS(ON) = 12mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage.

  CED655   CED655







Part Number CED65A3
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CED655 DatasheetCED65A3 Datasheet (PDF)

CED65A3/CEU65A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 38A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drai.

  CED655   CED655







N-Channel MOSFET

CED655/CEU655 N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 6.4A, RDS(ON) = 0.45Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 150 ±20 6.4 25.6 43 0.29 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 50 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2011.Aug http://www.cetsemi.com CED655/CEU655 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 150V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 150 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA 2 4V.


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