CED78A3/CEU78A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
25V, 70A, RDS(ON) = 7.5mΩ @VGS = 10V. RDS(O...
CED78A3/CEU78A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
25V, 70A, RDS(ON) = 7.5mΩ @VGS = 10V. RDS(ON) = 11mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
25
±20
70 280 60 0.48
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.1 50
Units V V A A W
W/ C C
Units C/W C/W
Rev 1. 2005.September
1
http://www.cetsemi.com
CED78A3/CEU78A3
Electrical Characteristics Tc = 25 C u...