CEDF630

CEDF630/CEUF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 200 ±20 7.8 31.2 50 0.33 Operating and Store Temperature Range TJ,Tstg -65 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.5 50 Units V V A A W W/ C C Units C/W C/W 2004.October 6 - 134 http://www.cetsemi.com CEDF630/CEUF630 Electrical Characteristics Tc = 25 C unless otherwise noted Para...