N-Channel Enhancement Mode Field Effect Transistor
Description
CEE02N6A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package.
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CEE SERIES TO-126
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ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Param...
