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CEF02N6 Datasheet

Part Number CEF02N6
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEF02N6 DatasheetCEF02N6 Datasheet (PDF)

CEF02N6 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.5A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole D 6 G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C .

  CEF02N6   CEF02N6






Part Number CEF02N9
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEF02N6 DatasheetCEF02N9 Datasheet (PDF)

CEP02N9/CEB02N9 CEF02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP02N9 CEB02N9 CEF02N9 VDSS 900V 900V 900V RDS(ON) 6.8Ω 6.8Ω 6.8Ω ID 2.6A 2.6A 2.6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Para.

  CEF02N6   CEF02N6







Part Number CEF02N7G
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEF02N6 DatasheetCEF02N7G Datasheet (PDF)

CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N7G CEB02N7G CEF02N7G VDSS 700V 700V 700V RDS(ON) 6.75Ω 6.75Ω 6.75Ω ID 2A 2A 2A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltag.

  CEF02N6   CEF02N6







Part Number CEF02N7
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEF02N6 DatasheetCEF02N7 Datasheet (PDF)

CEP02N7/CEB02N7 CEI02N7/CEF02N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N7 CEB02N7 CEI02N7 CEF02N7 VDSS 700V 700V 700V 700V RDS(ON) 6.6Ω 6.6Ω 6.6Ω 6.6Ω ID 1.9A 1.9A 1.9A 1.9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G G D S CEI SERIES TO-262(I2-PAK) S CEB SERIES TO-263(DD-PAK) G .

  CEF02N6   CEF02N6







Part Number CEF02N6G
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEF02N6 DatasheetCEF02N6G Datasheet (PDF)

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6G CEB02N6G CEF02N6G VDSS 600V 600V 600V RDS(ON) 5Ω 5Ω 5Ω ID 2.2A 2.2A 2.2A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Dr.

  CEF02N6   CEF02N6







Part Number CEF02N6A
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEF02N6 DatasheetCEF02N6A Datasheet (PDF)

CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I.

  CEF02N6   CEF02N6







N-Channel MOSFET

CEF02N6 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.5A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole D 6 G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ,T STG Limit 600 Unit V V A A A W W/ C C Ć 30 1.5 4.5 4.5 29 0.23 -65 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 6-117 4.3 65 C/W C/W http://www.Datasheet4U.com CEF02N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Symbol a Condition VDD =50V, L=60mH RG=9.1 Ω Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING 6 EAS IAS 125 2 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b VGS = 0V,ID = 250µA VDS =6 00V,V GS =0 V VGS =3Ć 0V, VDS =0 V VDS =V GS,I D = 250µA VGS =10V, ID =1 A VGS = 10V, VDS =1 0V VDS = 50V, ID =1 A VDD = 300V, ID =2 A, VGS =1 0V RGEN=18Ω 600 25 V µA Ć100 nA ON CHARACTERISTICS a Gate Threshold V.


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