CEP03N8/CEB03N8 CEF03N8
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP03N8 CEB03N8 CEF03N8
VDSS...
CEP03N8/CEB03N8 CEF03N8
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP03N8 CEB03N8 CEF03N8
VDSS 800V 800V
800V
RDS(ON) 4.8Ω 4.8Ω
4.8Ω
ID @VGS 3A 10V 3A 10V 3A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263
VDS 800
VGS ±30
ID
3 2
IDM e
12
125 PD
0.8
TO-220F
3d 2d 12 d 47 0.3
Single Pulsed Avalanche Energy h
EAS 32
Single Pulsed Avalanche Current h
IAS 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.2 62.5
3.2 62.5
Units
V V A A A W W/ C mJ A C
Units C/W C/W
Details are subject to change without notice .
1
Rev 2. 2012.July http://www.cet-mos.com
CEP03N8/CEB03N8 CEF03N8
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Ch...