CEF06N7

CEP06N7/CEB06N7 CEF06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP06N7 CEB06N7 CEF06N7 VDSS 700V 700V 700V RDS(ON) 2Ω 2Ω 2Ω ID @VGS 6A 10V 6A 10V 6A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 700 ±30 6 4 24 150 1 6 4d 24 d 48 0.3 Single Pulsed Avalanche Energy h EAS 125 Single Pulsed Avalanche Current h IAS 5 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1 62.5 3.1 65 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.May http://www.cetsemi.com CEP06N7/CEB06N7 CEF06N7 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage...