CEP07N7/CEB07N7 CEF07N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP07N7 CEB07N7 CEF07N7
VDSS...
CEP07N7/CEB07N7 CEF07N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP07N7 CEB07N7 CEF07N7
VDSS 700V 700V
700V
RDS(ON) 1.5Ω 1.5Ω
1.5Ω
ID 6.6A 6.6A 6.6A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
700
±30
6.6 26.4 166 1.3
6.6d 26.4d 50 0.4
Repetitive Avalanche Energy
EAR 3.6
Single Pulsed Avalanche Energy h Operating and Store Temperature Range
EAS TJ,Tstg
38.88 -55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.75 62.5
2.5 65
Units
V V A A W W/ C mJ mJ C
Units C/W C/W
Details are subject to change without notice .
1
Rev 4. 2012.Nov http://www.cet-mos.com
CEP07N7/CEB07N7 CEF07N7
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS...