CEF08N2

CEF08N2 Nov. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 250V , 6A , RDS(ON)=450m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole D G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 250 Unit V V A A A W W/ C C Ć 30 6 24 6 38 0.3 -50 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 RįJC RįJA 3.3 65 C/W C/W CEF08N2 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b Symbol Condition VGS = 0V, ID = 250µA VDS = 250V, VGS = 0V VGS =Ć30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 5.1A VGS = 10V, VDS = 10V VDS = 50V, ID = 5.1A Min Typ Max Unit 250 25 Ć100 V µA nA V mΩ A 4.4 630 100 40 S PF PF PF ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 2 4 450 10 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS b ...