CEF1175

CEP1175/CEB1175 CEF1175 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1175 CEB1175 CEF1175 VDSS 650V 650V 650V RDS(ON) 1Ω 1Ω 1Ω ID 10A 10A 10A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg f TO-220F Units V V 650 ±30 10 40 167 1.33 -55 to 150 10 40 50 0.4 e e A A W W/ C C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 0.75 62.5 Limit 2.5 65 Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2006.Oct http://www.cetsemi.com CEP1175/CEB1175 CEF1175 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c T...