CEP1185/CEB1185
CEF1185
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP1185 CEB1185 CEF1185
VDSS 800V 800V
800V
RDS(ON) 2.9 Ω 2.9 Ω
2.9 Ω
ID 4.4A 4.4A 4.4A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
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