CEP658N/CEB658N CEF658N
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP658N CEB658N CEF685N VDSS 18...
CEP658N/CEB658N CEF658N
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP658N CEB658N CEF685N VDSS 180V 180V 180V RDS(ON) 0.22Ω 0.22Ω 0.22Ω ID 16A 16A 16A
d
PRELIMINARY
@VGS 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg
e
TO-220F
Units V V
180
±20
16 64 125 1.0 -55 to 150 16 64 40 0.32
d d
A A W W/ C C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.0 62.5 Limit 3.1 65 Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice . 1
Rev 2. 2006.Oct http://www.cetsemi.com
CEP658N/CEB658N CEF658N
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold
Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Inp...