CEP6601/CEB6601 CEF6601
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -19A, RDS(ON) = 86mΩ @VGS = -...
CEP6601/CEB6601 CEF6601
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS -60
VGS ±20
ID -19 -16d
IDM -76 -64d
PD
50 46 0.4 0.3
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V V A A W W/ C C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3 3.3 62.5 62.5
Units C/W C/W
Details are subject to change without notice .
1
Rev .3 2011.May. http://www.cet-mos.com
CEP6601/CEB6601 CEF6601
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = -250µA VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold
Voltage Static Drain-Source On-Resista...