CEF740G

CEP740G/CEB740G CEF740G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP740G CEB740G VDSS 400V 400V CEF740G 400V RDS(ON) 0.55Ω 0.55Ω 0.55Ω ID 10A 10A 10A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS 400 VGS ±30 ID 10 10 e IDM f 40 40 e 125 40 PD 1.0 0.32 Single Pulsed Avalanche Energy g EAS 400 Single Pulsed Avalanche Current g IAS 10 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.0 62.5 3.1 65 Units V V A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice . 1 Rev 1. 2007.Nov. http://www.cet-mos.com CEP740G/CEB740G CEF740G Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Symbol Test Condition BVDSS IDSS IGSSF IGS...