CEK01N65

www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. CEK01N65 PRELIMINARY D G G D G S D TO-92(Ammopack) S TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 650 Units V V A A W C ±30 0.35 1.4 3.1 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Leadb Symbol RθJL Limit 40 Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2007.Feb http://www.cetsemi.com Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr CEK01N65 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gat...