CEM9424

CEM9424 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -7.7A, RDS(ON) = 25mΩ @VGS = -4.5V. RDS(ON) = 35mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±8 Drain Current-Continuous Drain Current-Pulsed a ID -7.7 IDM -30 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 2. 2007.July http://www.cetsemi.com CEM9424 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Sou...