CEP1185

CEP1185/CEB1185 CEF1185 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP1185 CEB1185 CEF1185 VDSS 800V 800V 800V RDS(ON) 2.9 Ω 2.9 Ω 2.9 Ω ID 4.4A 4.4A 4.4A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 800 VGS ±30 ID 4.4 2.8 IDM e 17.6 139 PD 1.1 TO-220F 4.4 d 2.8 d 17.6 d 45 0.4 Single Pulsed Avalanche Energy h EAS 331 Single Pulsed Avalanche Current h IAS 4.7 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal R...