Diode. CESDB5V0AT3 Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
CESDB5V0AT3 ESD Protection Diode
The CESDB5V0AT3 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
z Reverse working (stand-off) Voltage: 5.0 V
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 kV) Per Human Body Model
z IEC61000−4−2 Level 4 ESD Protection
z This is a Pb−Free Device
Maximum Ratings @Ta=25℃
Per Human Body Model
Per Machine Model
Total Power Dissipation on FR-5 Board (Note 1)
Thermal Resistance Junction−to−Ambient
Lead Solder Temperature − Maximum (10 Second Duration)
Junction and Storage Temperature Range
-55 ~ +150
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted)
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
VBR (V) @ IT
@IPP = 5 A
5.8 8.8 1.0
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
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