Diode. CESDB5V0AT3 Datasheet

CESDB5V0AT3 Datasheet PDF

Part CESDB5V0AT3
Description ESD Protection Diode
Feature CESDB5V0AT3; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes CESDB5V0AT3 E.
Manufacture JCET
Datasheet
Download CESDB5V0AT3 Datasheet




CESDB5V0AT3
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
CESDB5V0AT3 ESD Protection Diode
SOT-323
DESCRIPTION
The CESDB5V0AT3 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
FEATURES
z Reverse working (stand-off) Voltage: 5.0 V
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 kV) Per Human Body Model
z IEC6100042 Level 4 ESD Protection
z This is a PbFree Device
Maximum Ratings @Ta=25
IEC6100042(ESD)
ESD Voltage
Parameter
Air
Contact
Per Human Body Model
Per Machine Model
Symbol
Limit
±30
±30
16
400
Total Power Dissipation on FR-5 Board (Note 1)
PD 150
Thermal Resistance JunctiontoAmbient
RΘJA
833
Lead Solder Temperature Maximum (10 Second Duration)
TL 260
Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.62 in.
Unit
KV
KV
V
mW
/W
A,Jun,2011



CESDB5V0AT3
ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted)
Symbol
IPP
VC
VRWM
IR
VBR
IT
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
Device+
Device
Marking
VRWM
(V)
Max
IR (μA)
@ VRWM
Max
VBR (V) @ IT
(Note 2)
Min Max
IT
mA
VC
@IPP = 5 A
V
CESDB5V0AT3
B5A
5.0
1.0
5.8 8.8 1.0
9
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
IPP(A)
Max
125
VC (V)
@Max IPP
Max
15
C (pF)@
VR=0V,f=1MHz
Typ
26.5
A,Jun,2011







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