MOSFET. CEU730G Datasheet

CEU730G Datasheet PDF

Part CEU730G
Description N-Channel MOSFET
Feature CEU730G; N-Channel Enhancement Mode Field Effect Transistor FEATURES 400V, 5A, RDS(ON) = 1Ω @VGS = 10V. Super.
Manufacture Chino-Excel Technology
Datasheet
Download CEU730G Datasheet




CEU730G
CED730G/CEU730G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
400V, 5A, RDS(ON) = 1@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
400
±30
5
20
68
0.54
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
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Symbol
RθJC
RθJA
Limit
2.2
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2009.Nov
http://www.cetsemi.com



CEU730G
CED730G/CEU730G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 400V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
400
10
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
VGS = VDS, ID = 250µA
2
4
RDS(on)
VGS = 10V, ID = 3A
0.8 1
V
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 50V, ID = 5A
6S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
590
105
pF
pF
Crss 20 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 200V, ID = 3.5A,
VGS = 10V, RGEN =12
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 320V, ID =3.5A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
15 30 ns
7 14 ns
30 60 ns
5 10 ns
14 18 nC
2.5 nC
6 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS f
VSD
VGS = 0V, IS = 3A
5A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
.
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2



CEU730G
CED730G/CEU730G
12
VGS=10,9,8,7V
10
8 VGS=5V
6
4
VGS=4V
2
0
0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
900
750
Ciss
600
450
300
150 Coss
0 Crss
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
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0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
12
10
8
6
4
25 C
2 TJ=125C
-55 C
0
123456
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=3A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
100
10-1
10-2
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3







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