CED84A4/CEU84A4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 80A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(...
CED84A4/CEU84A4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 80A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
VDS VGS
ID
40
±20
80
56
Drain Current-Pulsed a
IDM 320
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
57.7 0.38
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.6 50
Units V V A A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 1. 2011.Mar http://www.cet-mos.com
CED84A4/CEU84A4
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
40
1 100 -100
V µA nA nA
Gate Threshold
Voltage Static Drain-Sour...