CGH27060F

PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. www.DataSheet4U.com Package Type : 440193 PN: CGH2706 0F Typical Performance Over 2.3-2.6GHz Parameter Small Signal Gain EVM @ 39 dBm Drain Efficiency @ 39 dBm Input Return Loss 2.3 GHz 13.5 2.1 24.2 9.8 (TC = 25˚C) of Demonstration Amplifier 2.5 GHz 13.0 1.9 22.5 7.7 2.6 GHz 12.9 2.2 22.3 5.9 Units dB % % dB 2.4 GHz 13.3 1.9 23.8 16.0 Note: Measured in the CGH27060F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Features 2007 Rev 1.0 – May 2.3 - 2.9 GHz Operation >13 dB Small Signal Gain 2.0 % EVM at 8 W POUT 23 % Efficiency at 8 W POUT 2.7˚C/W Typical thermal resistance under 8.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA Subject to change without notice. www.cree.com/wireless  Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Soldering Temperature Thermal Resistance, Junction to Case 1...