HEMT. CGH55015P1 Datasheet

CGH55015P1 Datasheet PDF

Part CGH55015P1
Description GaN HEMT
Feature CGH55015P1; CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a ga.
Manufacture Cree
Datasheet
Download CGH55015P1 Datasheet




CGH55015P1
CGH55015F1 / CGH55015P1
15 W, 5500-5800 MHz, GaN HEMT for WiMAX
Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX
and linear amplifier applications. The transistor is available in both screw-down, flange
and solder-down, pill packages. Based on appropriate external match adjustment, the
CGH55015F1/CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well.
PPNa:cCkGagHe5T5y0p1e5:P4140&1C9G6H&554041051F616
Typical Performance 5.5-5.8GHz (TC = 25˚C)
Parameter
5.50 GHz
Small Signal Gain
10.7
5.65 GHz
11.0
5.80 GHz
10.7
EVM at PAVE = 23 dBm
1.9 1.8 2.0
EVM at PAVE = 33 dBm
1.5 1.5 1.7
Drain Efficiency at PAVE = 33 dBm
25
25
25
Input Return Loss
11.5
14.5
10.5
Note:
Measured in the CGH55015-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
%
%
%
dB
Features
• 5.5 - 5.8 GHz Operation
• 15 W Peak Power Capability
• >10.5 dB Small Signal Gain
• 2 W PAVE < 2.0 % EVM
• 25 % Efficiency at 2 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for Multi-carrier DOCSIS Applications
Subject to change without notice.
www.cree.com/wireless
1



CGH55015P1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
PDISS
TSTG
TJ
IGMAX
IDMAX
TS
τ
84
-10, +2
7
-65, +150
225
4.0
1.5
245
60
Thermal Resistance, Junction to Case3
RθJC
8.0
Case Operating Temperature3
TC -40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH55015 at PDISS = 7W.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
Watts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage
VGS(Q)
-2.7
VDC VDS = 28 V, ID = 115 mA
Saturated Drain Current
IDS 2.9 3.5
A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics2,3 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted)
Small Signal Gain
GSS 8.5
11.0
VDC VGS = -8 V, ID = 3.6 mA
dB VDD = 28 V, IDQ = 115 mA
Drain Efficiency4
η
20.6
25
% VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
EVM
VSWR
2.0 2.5
10 : 1
% VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W
No damage at all phase angles,
Y VDD = 28 V, IDQ = 115 mA,
PAVE = 2.0 W
Input Capacitance
CGS 4.5 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS 1.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.2 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in the CGH55015-AMP test fixture.
3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4 Drain Efficiency = POUT / PDC.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH55015F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf



CGH55015P1
Typical WiMAX Performance
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
5.2
3.0
Small Signal S-Parameters vs Frequency measured
in the CGH55015-AMP
GainCaGndVHD5InD5p0=u1t52RF8eVtVrdu,dnI=DL2Qo8=sVs1,Ivd1sq5=F1rm1e5qAumeAncy of
S21 S11
5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0
Frequency (GHz)
EVM and Efficiency vs. Frequency measured
VEDVDM=&V2dEd8ifn=fiV2ct8,iheVIneD,IcQdCyq=G=o1f1H1C155G5m5Hm0A551,PA05o1,-u5PAtv=OMs3U.3TPFd=rBe2qme.5unWcy
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
6.1
30%
2.4 27%
1.8 24%
EVM
1.2 21%
Drain Efficiency
0.6 18%
0.0
5.45
5.50
5.55
5.60
5.65
5.70
5.75
5.80
15%
5.85
Note:
Frequency (GHz)
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3 CGH55015F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf







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