CGHV14800F Datasheet (data sheet) PDF

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CGHV14800F Datasheet - GaN HEMT

CGHV14800F   CGHV14800F  

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CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree ’s CGHV14800 is a gallium nitride (Ga N) high electron mobility transistor (H EMT) designed specifically with high ef ficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as a ir traffic control (ATC) radar

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