CGHV96050F1
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Description
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to...
