HEMT. CGHV96100F2 Datasheet

CGHV96100F2 Datasheet PDF

Part CGHV96100F2
Description GaN HEMT
Feature CGHV96100F2; CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Cree’s CGHV96100.
Manufacture Wolfspeed
Datasheet
Download CGHV96100F2 Datasheet




CGHV96100F2
CGHV96100F2
100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output
Matched GaN HEMT
Description
Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET
offers excellent power added efficiency in comparison to other technologies.
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to GaAs transistors. This IM FET is available in a metal/
ceramic flanged package for optimal electrical and thermal performance.
PN: CGHV96100F2
Package Type: 440217
Typical Performance Over 8.4 - 9.6 GHz (TC = 25˚C)
Parameter
Linear Gain
Output Power
Power Gain
Power Added Efficiency
8.4 GHz
13.8
171
10.3
45.5
8.8 GHz
12.8
163
10.1
42.8
9.0 GHz
13.0
160
10.0
41.5
9.2 GHz
12.4
150
9.7
39.2
9.4 GHz
11.8
137
9.4
35.5
Note: Measured in CGHV96100F2-TB (838179) under 100 μS pulse width, 10% duty, Pin 42.0 dBm (16 W)
9.6 GHz
11.4
131
9.1
35.4
Units
dB
W
dB
%
Features
8.4 - 9.6 GHz Operation
145 W POUT typical
10 dB Power Gain
40% Typical PAE
50 Ohm Internally Matched
<0.3 dB Power Droop
Applications
Marine Radar
Weather Monitoring
Air Traffic Control
Maritime Vessel Traffic Control
Port Security
Large Signal Models Available for ADS and MWO
Rev 3.1 - April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com



CGHV96100F2
CGHV96100F2
Absolute Maximum Ratings (not simultaneous)
Parameter
Drain-source Voltage
Gate-source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Drain Current1
Maximum Forward Gate Current
Soldering Temperature2
Screw Torque
Symbol
VDSS
VGS
PDISS
TSTG
TJ
IDMAX
IGMAX
TS
τ
Rating
120
-10, +2
222.0
-65, +150
225
12
28.8
245
40
Thermal Resistance, Junction to Case
RθJC
0.73
Case Operating Temperature3
TC
-40, +125
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library
3 See also, the Power Dissipation De-rating Curve on Page 9
Units
Volts
Volts
Watts
˚C
˚C
Amps
mA
˚C
in-oz
˚C/W
˚C
2
Conditions
25˚C
25˚C
Pulsed
25˚C
Pulse Width = 100 µs, Duty Cycle =
10%, 85˚C, PDISS = 173 W
Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics1
Gate Threshold Voltage
Gate Quiscent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
RF Characteristics3
Small Signal Gain
Input Return Loss 1
Input Return Loss 2
Output Return Loss
Power Output3,4
Power Added Efficiency3,4
Power Gain3,4
Output Mismatch Stress
Symbol Min. Typ. Max. Units Conditions
VGS(TH) -3.8 -3.0
-2.3 V
VGS(Q)
-2.7
V
IDS
20.7 28.8 –
A
VBD
100 –
V
VDS = 10 V, ID = 28.8 mA
VDS = 40 V, ID = 1000 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 28.8 mA
S21 10.5 12.4
dB
S11 –
–5.2 -2.8 dB
S11 –
-3.3 dB
S22 –
–12.3 -6.0 dB
POUT
100 131.0 –
W
PAE 30 45
%
PG
10.2 –
dB
VSWR
5:1 Y
VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm
VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm, 8.4 - 9.4 GHz
VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm, 9.4 - 9.6 GHz
VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm
VDD = 40 V, IDQ = 1000 mA, PIN = 41.75 dBm
VDD = 40 V, IDQ = 1000 mA, PIN = 41.75 dBm
VDD = 40 V, IDQ = 1000 mA, PIN = 41.75 dBm
No damage at all phase angles,
VDD = 40 V, IDQ = 1000 mA,
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in CGHV96100F2-AMP (838179) under 100 μS pulse width, 10% duty
4 Fixture loss de-embedded using the following offsets: Frequency = 9.6 GHz. Input = 0.5 dB and Output = 0.5 dB
Rev 3.1 - April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com



CGHV96100F2
CGHV96100F2
3
CGHV96100F2 Typical Performance
Figure 1. Small Signal Gain and Return Loss vs Frequency
of CGHV96100F2 measured in CGHV96100F2-AMP
VDS = 40 V, IDQ = 1000 mA
Frequency (GHz)
Figure 2. Power Gain vs. Frequency and Input Power
VDD = 40 V, Pulse Width = 100 μsec, Duty Cycle = 10%
Rev 3.1 - April 2020
Frequency (GHz)
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com







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