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CHA2069-QDG

United Monolithic Semiconductors

18-30GHz Low Noise Amplifier

CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Descripti...


United Monolithic Semiconductors

CHA2069-QDG

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Description
CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multi- point, VSAT) to ISM and military markets. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free SMD package. Main Features ■ Broadband performance 18-30GHz ■ 3dB noise figure ■ 20dB gain ■ 65mA low DC power consumption ■ 20dBm 3rd order intercept point (high current configuration) ■ 24L-QFN4x4 SMD package ■ MSL Level: 1 Gain & NF (dB) UMS A2069 YYWW Gain and NF @ high current configuration (BCF grounded) 26 24 22 20 18 S21 16 14 12 10 8 6 NF 4 2 0 10 12 14 16 18 20 22 24 26 28 30 32 Frequency (GHz) Main Characteristics Tamb = +25°C, Vd =...




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