GaAs Monolithic Microwave
CHA6005-99F
Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA)
8-12GHz High Power Amplifier
GaAs Monolithic M...
Description
CHA6005-99F
Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA)
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6005-99F is a high power amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Main Features
■ High power : 32.5dBm ■ High PAE : 38% ■ Frequency band : 8-12GHz ■ Linear gain : 22dB ■ DC bias: Vd=8Volt@Id=350mA ■ Chip size 3x1.5x0.1mm
34 600
32 550
30 500
28 450
Linear Gain (dB)
26
Pout @ Pin=14 dBm (3dBcomp)
400
Idrain @ Pin=14 dBm (3dBcomp)
24 350
22 300
20 250
18 200 8 8.5 9 9.5 10 10.5 11 11.5 12
Freq (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
G Linear Gain
P1dB Output Power @ 3dB comp.
PAE Power Added Efficiency @ 3dB comp.
Min Typ Max Unit 8 12 GHz 22 dB 31.5 dBm 38 %
Ref. : DSCHA60052244 - 31 Aug 12
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6005-99F
8-12GHz High Power Amplifier
Electric...
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