CHA6005-99F

CHA6005-99F Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA) 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6005-99F is a high power amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ High power : 32.5dBm ■ High PAE : 38% ■ Frequency band : 8-12GHz ■ Linear gain : 22dB ■ DC bias: Vd=8Volt@Id=350mA ■ Chip size 3x1.5x0.1mm 34 600 32 550 30 500 28 450 Linear Gain (dB) 26 Pout @ Pin=14 dBm (3dBcomp) 400 Idrain @ Pin=14 dBm (3dBcomp) 24 350 22 300 20 250 18 200 8 8.5 9 9.5 10 10.5 11 11.5 12 Freq (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range G Linear Gain P1dB Output Power @ 3dB comp. PAE Power Added Efficiency @ 3dB comp. Min Typ Max Unit 8 12 GHz 22 dB 31.5 dBm 38 % Ref. : DSCHA60052244 - 31 Aug 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Electric...