CHA7215

CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 35% power added efficiency at 4dBc and a high robustness on mismatch load. This device is manufactured using 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. Main Features 0.25 µm Power pHEMT Technology Frequency band: 8.5 – 11.5GHz Output power: 39.5dBm at saturation High linear gain: 28dB Power added efficiency: 34% @4dBc Quiescent bias point: Vd=8V, Id=2.3A Chip size: 5 x 3.31 x 0.07mm VG1R VD1 ●● ● IN ● VD1 VG2R VD2 ●● ● VD2 VG3R VD3 ●● ●● VG3R VD3 ● OUT O utput Pow er (dB m ) 41 40,5 40 39,5 39 38,5 38 37,5 37 36,5 36 35,5 35 8 Output Power versus Frequency @Pin=19dBm Temp=-40°C Temp=+20°C Temp=+80°C 8,5 9 9,5 10 10,5 11 11,5 Frequency (GHz) 12 Main Characteristics Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10% Symbol Parameter Min Typ Max Unit Top Operating temperature range -40 +80 °C Fop Operating frequency range 8.5 11.5 GHz PAE_4dBc Power added efficiency @4dBc @ 20°C 34 % Psat Saturated output power @ 20°C 39.5 dBm G Small signal gain @ 20°C 25 28 31 dB ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions! Ref : DSCHA72159287 - 14 Oct 09 1/8 Specifications subject to change without notice U...