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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR ...
www.DataSheet4U.com
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTORS
CIL351/352 TO-18 Metal Can Package
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter
Voltage Collector Base
Voltage Emitter Base
Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case
SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg
VALUE 70 75 6.0 200 300 1.72 750 4.29 - 65 to +200
UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC
Rth (j-a) Rth (j-c)
583 233
ºC/W ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter
Voltage VCBO IC=100µA, IE=0 Collector Base
Voltage VEBO IE=100µA, IC=0 Emitter Base
Voltage Collector Cut Off Current DC Current Gain ICBO hFE VCB=20V, IE=0 IC=1mA, VCE=10V CIL351 CIL352 IC=10mA, IB=0.5mA IC=100mA, IB=5mA Base Emitter on
Voltage DYNAMIC CHARACTERISTICS DESCRIPTION Transition Frequency VBE (on) IC=10mA, VCE=5V
MIN 70 75 6.0
TYP
MAX
UNIT V V V
25 100 200 250 480 0.25 0.60 1.0
nA
Collector Emitter Saturation
Voltage
*VCE (sat)
V V V
SYMBOL fT
TEST CONDITION IC=10mA, VCE=5V, f=100MHz
MIN
TYP 100
MAX
UNIT MHz
*Pulse Condition: Pulse Width <300µ s, Duty Cycle <2%
CIL351_352Rev_1 120504E
Continental Device India Limited
Data Sheet
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