CJP75N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJP75N80 N-Channel Power MOSFET General Description The CJ75N80 uses advanced trench technology and design to Provide excellent RDS(on) with low gate charge. Good stability and uniformity with high EAS .This device is suitable for use in PWM, load switching and general purpose applications. FEATURE z Advanced trench process technology z Special designed for convertors and power controls z High density cell design for ultra low RDS(on) z Fully characterized avalanche voltage and current z Fast switching z Avalanche energy 100% test APPLICATIONS z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Gate-Source Voltage Drain Current(DC) at TC=25℃ Drain Current-Continuous @Current-Pulsed(note1) Power Dissipation Maximum Power Dissipation (note 3, Ta=25℃) (note 4, Tc=25℃) Symbol VDSS VGS ID(DC) IDM(pulse) PD EAS RθJA Tj Tstg Value 75 ±25 80 320 2 160 580 62.5 175 -55 ~+175 Unit V A W W mJ ℃/W ℃ TO-220 1. GATE 2. DRAIN 3. SOURCE 123 Single Pulsed Avalanche Energy(note2) Thermal Resistance, Junction-to-Ambient Storage Temperature Junction Temperature Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition: Tj=25℃ , VDD=37.5V,VG=10V,L=0.5mH,ID=20A 3. This test is performed with no heat sink at Ta=25℃ 4. This test is performed ...