CM1200DB-34N

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DB-34N q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 2-element in a Pack q Cu Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Motor control, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM 130±0.5 57±0.25 57±0.25 4 - M8 NUTS Dimensions in mm 4(E1) 2(C2) C2 20±0.1 E1 4 2 G1 124±0.25 140±0.5 G2 C1 3(C1) 1(E2) E2 3 1 30±0.2 E1 G1 C1 C2 G2 E2 CIRCUIT DIAGRAM 6 - M4 NUTS 53±0.2 16±0.2 18±0.2 40±0.2 44±0.2 57±0.2 6 - φ 7 MOUNTING HOLES 55.2±0.3 screwing depth min. 7.7 11.85±0.2 screwing depth min. 16.5 5±0.2 35±0.2 11.5±0.2 14±0.2 38 +1 –0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 29.5±0.5 5±0.2 28 +1 –0 MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage M...