isc Thyristors
INCHANGE Semiconductor
CMA30E1600PN
DESCRIPTION ·With TO-220F packaging ·Long-term stability ·Thyristor...
isc Thyristors
INCHANGE Semiconductor
CMA30E1600PN
DESCRIPTION ·With TO-220F packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state
voltage
VRRM Repetitive peak reverse
voltage
IT(AV) Average forward current
IT(RMS) RMS on-state current
ITSM
Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=45℃ )
PG(AV) Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
MIN
UNIT
1700
V
1600
V
Tc=40℃
23
A
36
A
50HZ
260
60HZ
280
A
0.5
W
-40~125 ℃
-40~150 ℃
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isc Thyristors
INCHANGE Semiconductor
CMA30E1600PN
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current VRM=VRRM
IDRM
Repetitive peak off-state current VDM=VDRM
Tj=25℃ Tj=125℃
VTM On-state
voltage
ITM= 30A
IGT
Gate-trigger current
VD = 6V; RL=100Ω
VGT Gate-trigger
voltage
VD = 6V; RL=100Ω
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
0.01 2
mA
1.42 V
28 mA
1.3
V
2.5 ℃/W
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is p...
