CMM4000-BD

2.0-18.0 GHz GaAs MMIC Low Noise Amplifier July 2006 - Rev 06-Jul-06 CMM4000-BD Chip Device Layout Features Self Bias Architecture On-Chip Drain Bias Coil/DC Blocking 9.0 dB Small Signal Gain 4.5 dB Noise Figure +19.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s 2.0-18.0 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via www.DataSheet4U.com holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for fiber optic, microwave radio, military, space, telecom infrastructure, test instrumentation and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +8.5 VDC 175 mA +20 dBm -65 to +165 OC -55 to MTTF Table 1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22...