CMP5950
P-Channl Silicon MOSFET
General Description
The CMP5950 uses advanced trench technology and design to provide ...
CMP5950
P-Channl Silicon
MOSFET
General Description
The CMP5950 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features P-Channel Low ON-resistance. Fast Switching 100% avalanche tested
Absolute Maximum Ratings
Product Summery
BVDSS -100V
RDSON 42m
Applications
Inverters Motor drive DC / DC converter
TO220 Pin Configuration
ID -35A
D
G DS
TO-220
(CMP5950)
G S
Symbol VDS VGS
ID@TC=25 IDM IAS
PD@TC=25 TSTG TJ
Parameter Drain-Source
Voltage Gate-Sou ce
Voltage Continuous Drain Current Pulsed Drain Current
Avalanche Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Rating -100 20 -35 -105 -35 65
-55 to 150 150
Units V V A A A W
Thermal Data
Symbol R JA R JC
Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-case
Typ. -----
Max. 62.5
2
Unit /W /W
1
CMP5950
Electrical Characteristics (TJ=25 , unless otherwise...
