CMPA0527005F

CMPA0527005F 5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT CMPA0527005F is packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This device is matched to 50 ohms at the input and unmatched at the output. This device operates from a 50 V rail and is intended to be used as a predriver from 0.5 to 2.7 GHz. The transistor is available in a 6 leaded flange package. PackPaNg:eCTMyPpAes0:52474000252F1 Typical Performance Over 0.5 - 2.7 GHz (TC = 25˚C), 50 V, PIN = 24 dBm, CW Parameter 0.5 GHz 1.0 GHz 1.5 GHz 2.0 GHz 2.7 GHz Small Signal Gain 20.4 20.8 21 20.5 19.5 Output Power 7.8 9.3 9.1 8.7 6.6 Drain Efficiency 58.5 53.8 49.2 47.1 41.5 Note: Measured in the CMPA0527005F-AMP1 application circuit. Units dB W % Features Up to 2.7 GHz Operation 8 W Typical Output Power 20 dB Small Signal Gain Application Circuit for 0.5 - 2.7 GHz 50% Efficiency 50 V Operation Rev 1.2 - March 2020 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ 150 -10, +2 -65, +150 225 1.2 0.5 245 40 Thermal Resistance, Junction to Case3 RθJC 18 Case Operating Temperature4 TC -40, +75 Note: ...